Beilstein J. Nanotechnol.2018,9, 146–154, doi:10.3762/bjnano.9.17
concentration in the nanostructures exceeds 5∙1019 cm−3.
Keywords: A3B5 on Si; epitaxy; GaN; MBE; nanowires; nanotubes; nanotube-likenanostructures; Si; Introduction
Gallium nitride quasi-one-dimensional nanostructures such as nanowires (NWs) and nanotubes (NTs) synthesized by means of plasma-assisted
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Figure 1:
Scanning electron microscope (SEM) images of the nanowire (NW) arrays: a) image of the array grown ...